2002. 7. 9
1/4
SEMICONDUCTOR
TECHNICAL DATA
KRA110S~KRA114S
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 2
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
DIM
MILLIMETERS
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
+
_
EQUIVALENT CIRCUIT
MAXIMUM RATING (Ta=25 )
R1
C
E
B
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-50
V
Collector-Emitter Voltage
V
CEO
-50
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-100
mA
Collector Power Dissipation
P
C
200
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
TYPE
KRA110S
KRA111S
KRA112S
KRA113S
KRA114S
MARK
PK
PM
PN
PO
PP
Type Name
Marking
Lot No.
MARK SPEC
2002. 7. 9
2/4
KRA110S~KRA114S
Revision No : 2
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : * Characteristic of Transistor Only.
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-50V, I
E
=0
-
-
-100
nA
Emitter Cut-off Current
I
EBO
V
EB
=-5V, I
C
=0
-
-
-100
nA
DC Current Gain
h
FE
V
CE
=-5V, I
C
=-1mA
120
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-10mA, I
B
=-0.5mA
-
-0.1
-0.3
V
Transition Frequency
f
T
*
V
CE
=-10V, I
C
=-5mA
-
250
-
MHz
Input Resistor
KRA110S
R
1
-
4.7
-
k
KRA111S
-
10
-
KRA112S
-
100
-
KRA113S
-
22
-
KRA114S
-
47
-
Switching
Time
Rise
Time
KRA110S
t
r
V
O
=-5V
V
IN
=-5V
R
L
=1k
-
0.2
-
S
KRA111S
-
0.065
-
KRA112S
-
0.4
-
KRA113S
-
0.1
-
KRA114S
-
0.15
-
Storage
Time
KRA110S
t
stg
-
2.0
-
KRA111S
-
1.7
-
KRA112S
-
3.0
-
KRA113S
-
2.0
-
KRA114S
-
1.5
-
Fall
Time
KRA110S
t
f
-
0.3
-
KRA111S
-
0.3
-
KRA112S
-
1.7
-
KRA113S
-
0.8
-
KRA114S
-
1.5
-
2002. 7. 9
3/4
KRA110S~KRA114S
Revision No : 2
COLLECTOR CURRENT I (mA)
DC CURRENT GAIN h
-0.1
FE
300
-0.3
-1
-3
2k
h - I
FE
C
C
COLLECTOR CURRENT I (mA)
DC CURRENT GAIN h
FE
h - I
FE
C
C
COLLECTOR CURRENT I (mA)
DC CURRENT GAIN h
FE
h - I
FE
C
C
-10
-30
-100
10
30
50
100
500
1k
Ta=100 C
Ta=25 C
Ta=-25 C
V =-5V
CE
-0.3
-0.1
100
30
50
10
300
500
1k
2k
V =-5V
-10
-3
-1
Ta=100 C
Ta=25 C
Ta=-25 C
CE
-100
-30
-0.3
10
-0.1
50
30
100
-10
V =-5V
Ta=-25 C
-1
CE
-3
-100
-30
1k
500
300
2k
Ta=25 C
Ta=100 C
KRA110S
KRA111S
KRA112S
KRA110S
-0.3
COLLECTOR CURRENT I (mA)
-0.1
COLLECTOR-EMITTER SATURATIN
CE(sat)
-0.1
-0.05
-0.03
-0.01
-1
-0.5
-0.3
-2
I /I =20
-10
-3
-1
Ta=-25 C
Ta=25 C
Ta=100 C
C
-100
-30
C
V - I
CE(sat)
C
VOLTAGE V (V)
COLLECTOR CURRENT I (mA)
COLLECTOR-EMITTER SATURATIN
CE(sat)
C
V - I
CE(sat)
C
VOLTAGE V (V)
COLLECTOR CURRENT I (mA)
COLLECTOR-EMITTER SATURATIN
CE(sat)
C
V - I
CE(sat)
C
VOLTAGE V (V)
I /I =20
Ta=-25 C
Ta=100 C
-0.3
-0.1
-0.3
-0.5
-0.01
-0.03
-0.05
-0.1
-1
C
-1
-3
-10
Ta=25 C
KRA111S
-2
-30
-100
B
B
Ta=100 C
-0.3
Ta=-25 C
-0.1
-0.05
-0.03
-0.01
-0.1
-1
Ta=25 C
-3
-10
-100
-30
I /I =20
KRA112S
-0.5
-0.3
-1
-2
B
C
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